Study of Growing High-Quality Metamorphic Buffer Layer by MOCVD and Selective Etching Process Technology for High Performance HEMT Applications
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === A novel technique of directly growing high-quality InxGa1-xAs or InP buffer layers on GaAs substrates by MOCVD and a newly developed citric buffer etchant (for gate-recess process) have been proposed, which benefits the improvement of HEMT performance. Rec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05143389943907724512 |