Investigation and Fabrication of Al.32Ga.68N/GaN Heterostructure Field Effect Transistor
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this thesis, we utilized Cl2, BCl3 and Ar mixtures as the inductively coupled plasma source to research the etching characteristics of AlGaN. At first, we used Cl2 and Ar mixtures as inductively coupled plasma, and we obtained the result that the highes...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14915386301711737003 |