The Study of Hot Electron Effects under Accelerated DC Stresses on Low-Noise AlGaAs/InGaAs/GaAsand InGaP/InGaAs/GaAs PHEMTs
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === Under accelerated DC stresses, the DC characteristics and noise performance of AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs low noise PHEMTs with the gate dimension 0.25 x 160 µm2 are investigated, It is found that the gate-leakage current and minimum noise fi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76100822168852419656 |