Investigation and Fabrication of AlGaN/InGaN/GaN DHFET
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this thesis, we epitaxy AlGaN/GaN single heterostructure fieldeffect transistor (SHFET) and AlGaN/InGaN/GaN double heterostructure field effect transistor (DHFET). In AlGaN/InGaN/GaN DHFET, we epitaxy three structures with different InGaN thickness whic...
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ndltd-TW-092NCKU54280542019-05-15T19:19:28Z http://ndltd.ncl.edu.tw/handle/btwqtu Investigation and Fabrication of AlGaN/InGaN/GaN DHFET 氮化鋁鎵/氮化銦鎵/氮化鎵雙異質接面場效電晶體的製作與研究 Keng-Yu Chen 陳畊佑 碩士 國立成功大學 微電子工程研究所碩博士班 92 In this thesis, we epitaxy AlGaN/GaN single heterostructure fieldeffect transistor (SHFET) and AlGaN/InGaN/GaN double heterostructure field effect transistor (DHFET). In AlGaN/InGaN/GaN DHFET, we epitaxy three structures with different InGaN thickness which are 100Å, 300Å,and 500Å. The AlGaN/InGaN/GaN DHFET device with 500Å InGaN layer thickness has maximum drain current (518mA/mm) and maximum transconductance (167mS/mm) for DC performance. At RF analysis section, we use Agilent 8510C network analyzer and de-embedding technique to get highest cut-off frequency fT (3.81GHz) and highest maximum oscillation frequency fMAX (4.95GHz) of the AlGaN/InGaN/GaN DHFET device with 500Å InGaN layer thickness. In addition, we investigate the theories of conduction band discontinuity, spontaneous polarization and piezoelectric polarization to discuss the mechanism of 2DEG formation in AlGaN/GaN SHFET and AlGaN/InGaN/GaN DHFET. Yan-Kuin Su 蘇炎坤 2004 學位論文 ; thesis 84 en_US |
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碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this thesis, we epitaxy AlGaN/GaN single heterostructure fieldeffect transistor (SHFET) and AlGaN/InGaN/GaN double heterostructure field effect transistor (DHFET). In AlGaN/InGaN/GaN DHFET, we epitaxy three structures with different InGaN thickness which are 100Å, 300Å,and 500Å. The AlGaN/InGaN/GaN DHFET device with 500Å InGaN layer thickness has maximum drain current (518mA/mm) and
maximum transconductance (167mS/mm) for DC performance. At RF analysis section, we use Agilent 8510C network analyzer and de-embedding technique to get highest cut-off frequency fT (3.81GHz)
and highest maximum oscillation frequency fMAX (4.95GHz) of the AlGaN/InGaN/GaN DHFET device with 500Å InGaN layer thickness.
In addition, we investigate the theories of conduction band discontinuity, spontaneous polarization and piezoelectric polarization to discuss the mechanism of 2DEG formation in AlGaN/GaN SHFET and AlGaN/InGaN/GaN DHFET.
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author2 |
Yan-Kuin Su |
author_facet |
Yan-Kuin Su Keng-Yu Chen 陳畊佑 |
author |
Keng-Yu Chen 陳畊佑 |
spellingShingle |
Keng-Yu Chen 陳畊佑 Investigation and Fabrication of AlGaN/InGaN/GaN DHFET |
author_sort |
Keng-Yu Chen |
title |
Investigation and Fabrication of AlGaN/InGaN/GaN DHFET |
title_short |
Investigation and Fabrication of AlGaN/InGaN/GaN DHFET |
title_full |
Investigation and Fabrication of AlGaN/InGaN/GaN DHFET |
title_fullStr |
Investigation and Fabrication of AlGaN/InGaN/GaN DHFET |
title_full_unstemmed |
Investigation and Fabrication of AlGaN/InGaN/GaN DHFET |
title_sort |
investigation and fabrication of algan/ingan/gan dhfet |
publishDate |
2004 |
url |
http://ndltd.ncl.edu.tw/handle/btwqtu |
work_keys_str_mv |
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