Investigation and Fabrication of AlGaN/InGaN/GaN DHFET

• Main Authors: Keng-Yu Chen, 陳畊佑
• Other Authors: Yan-Kuin Su
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/btwqtu

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === 　　In this thesis, we epitaxy AlGaN/GaN single heterostructure fieldeffect transistor (SHFET) and AlGaN/InGaN/GaN double heterostructure field effect transistor (DHFET). In AlGaN/InGaN/GaN DHFET, we epitaxy three structures with different InGaN thickness which are 100Å, 300Å,and 500Å. The AlGaN/InGaN/GaN DHFET device with 500Å InGaN layer thickness has maximum drain current (518mA/mm) and maximum transconductance (167mS/mm) for DC performance. At RF analysis section, we use Agilent 8510C network analyzer and de-embedding technique to get highest cut-off frequency fT (3.81GHz) and highest maximum oscillation frequency fMAX (4.95GHz) of the AlGaN/InGaN/GaN DHFET device with 500Å InGaN layer thickness. 　　In addition, we investigate the theories of conduction band discontinuity, spontaneous polarization and piezoelectric polarization to discuss the mechanism of 2DEG formation in AlGaN/GaN SHFET and AlGaN/InGaN/GaN DHFET.