InAlAs/InGaAs metamorphic high electron mobility transistor with InAlGaAs buffer layer
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this thesis, the characteristics of the In0.45Al0.55As/ In0.53Ga0.47As metamorphic high electron mobility transistors (MHEMT’s) with InAlGaAs buffer layer grown by Molecular beam epitaxy (MBE) have been studied. The InAlGaAs buffer layer in this structu...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/z38v8q |