Study of InP-based Optoelectronic Switching Device
碩士 === 國立成功大學 === 光電科學與工程研究所 === 92 === The purpose of this paper is to analyze and fabricate the optoelectronic switch of long wavelength based on InP materials systems. We combine p-n-p-n device with multi-quantum well InGaAs/InGaAsP to promote emission efficiency. At first, we compare the curre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98503306362143272199 |