The research of Radio-Frequency Metal-Insulator-Metal capacitor using high-k as dielectrics
博士 === 國立交通大學 === 電子工程系 === 92 === As the very large scale integration (VLSI) technology continues to be scaled down, both the cut-off frequency fT and the device size of radio frequency (RF) metal-oxide-semiconductor field-effect transistors (MOSFETs) are improved, allowing them to be us...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/23776245079558317645 |