The research of Radio-Frequency Metal-Insulator-Metal capacitor using high-k as dielectrics
博士 === 國立交通大學 === 電子工程系 === 92 === As the very large scale integration (VLSI) technology continues to be scaled down, both the cut-off frequency fT and the device size of radio frequency (RF) metal-oxide-semiconductor field-effect transistors (MOSFETs) are improved, allowing them to be us...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2004
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Online Access: | http://ndltd.ncl.edu.tw/handle/23776245079558317645 |