A Novel Highly Reliable Flash Memory --- Characteristics, Reliability Evaluations, and Applications

博士 === 國立交通大學 === 電子工程系 === 92 === In this dissertation, a novel highly reliable Flash memory is introduced in state-of-the-art 0.15-micrometer technologies, and 3-poly process is used to fabricate the sidewall-gate novel Flash memories. At first time, a 3-poly Flash memories are utilized in both NO...

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Bibliographic Details
Main Authors: Caleb Yu-Sheng Cho, 卓煜盛
Other Authors: Ming-Jer Chen
Format: Others
Language:en_US
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/75029931942176964799