The study of GaAs/InGaP heterostructre grown by LP-MOCVD and its application to etching stop layer
碩士 === 國立交通大學 === 材料科學與工程系所 === 92 === In this study, we grow GaAs on InGaP by LP-MOCVD. Due to the material property of GaAs/InGaP material system, the InGaAsP intermixing layer formed spontaneously in the interface. This quaternary intermixing layer reduced HBT current gain and etching selectivity...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/d4725e |