Fully NiSi and NiGe Dual Metal Gates on MOS devices
碩士 === 國立交通大學 === 電子工程系所 === 92 === Since the characteristic of poly-silicon is suitable for gate electrode in current VLSI technology, it has been used as the MOSFET gate material for decades. However, as MOS devices are scaled into the sub-100 nm regime, poly-Si gate technology issues such as gate...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16570881796890397621 |