Study on Nanocrystal Nonvolatile Memory Devices
碩士 === 國立交通大學 === 電子工程系所 === 92 === In a conventional nonvolatile memory, charge is stored in a polysilicon floating gate (FG) surrounded by dielectrics. The scaling limitation stems from the requirement of very thin tunnel oxide layer. For FG, once the tunnel oxide develops a leaky path under repea...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/x8n365 |