Study on Nanocrystal Nonvolatile Memory Devices
碩士 === 國立交通大學 === 電子工程系所 === 92 === In a conventional nonvolatile memory, charge is stored in a polysilicon floating gate (FG) surrounded by dielectrics. The scaling limitation stems from the requirement of very thin tunnel oxide layer. For FG, once the tunnel oxide develops a leaky path under repea...
Main Authors: | Sheng Hung Lin, 林泩宏 |
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Other Authors: | Simon M. Sze |
Format: | Others |
Language: | en_US |
Published: |
2004
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Online Access: | http://ndltd.ncl.edu.tw/handle/x8n365 |
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