A Study of Reliability and Channel Thickness Effect on Si0.85Ge0.15 MOSFETs with Ultra-Thin N2O-annealed Nitride
碩士 === 國立交通大學 === 電子工程系所 === 92 === We have investigated the reliability and the channel thickness effect of MOSFETs with Si0.85Ge0.15 channel and ultra-thin (EOT=3.1 nm) N2O-annealed SiN gate dielectric. The offset of valence band is about 0.1 eV. The FN tunneling dominates the conduction mechanism...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/y8sa23 |