Linear Work Function Modulation Using Hf-Mo Binary Metallic Alloys for Nanometer Device Application
碩士 === 國立交通大學 === 電子工程系所 === 92 === With the downscaling of CMOS gate length to 100 nm regime as well as the drastic thinning of gate oxide thickness, poly depletion effect and high gate resistance encountered in poly-silicon gates will be more pronounced. Metal gates can eliminate poly depletion ef...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4qskyw |