Extraction of Channel Backscattering Coefficients in Nanoscale MOSFET
碩士 === 國立交通大學 === 電子工程系所 === 92 === Channel backscattering coefficients in the kBT layer (near the source) of 1.65-nm thick gate oxide n-channel MOSFETs are systematically separated into two distinct components: the quasi-thermal-equilibrium mean-free-path for backscattering and the width of the kBT...
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| Format: | Others |
| Language: | en_US |
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2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7h5yrs |