Device based on WO3/IrO2 without Electrolyte

碩士 === 國立交通大學 === 電子物理系所 === 92 === This article made a main research into which based on WO3╱IrO2 diode device without electrolyte. We deposited WO3 and IrO2 thin films on platinum electrodes and made the parts of these thin films were overlap. The interface of these thin films formed a diode struc...

Full description

Bibliographic Details
Main Authors: Ching-Chang Chen, 陳慶昌
Other Authors: Shu-chi Chao
Format: Others
Language:zh-TW
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/n554ms