InAs Thickness Dependence of Carrier Emission and Capture from Defects in InAs/InGaAs dots-in-a-well Structure
碩士 === 國立交通大學 === 電子物理系所 === 92 === In this study, we have investigated the InAs/InGaAs (dots-in-a -well) structure with different InAs thickness . Red shift of Photoluminescence (PL) spectroscopy is observed from 1238nm to 1310nm as the InAs thickness increases from 1.97 to 2.7 ML. A significant re...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/v7tn8u |