Low-resistance ohmic contacts with high reflectivity on p-type GaN
碩士 === 國立中央大學 === 電機工程研究所 === 92 === In this letter, we reported a low-resistance, thermally stable and high-reflectivity Pd(3 nm)/Ni(2 nm)/Al(150 nm)/Ti(20 nm)/Au(30 nm) Ohmic contact to p-type GaN: Mg (1.5×1017 cm-3 ). The specific contact resistance of the contact is as low as 1.23×10-2 ohm-cm2....
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67426845057741935212 |