Low-resistance ohmic contacts with high reflectivity on p-type GaN

• Main Authors: Chi-Shin Fang, 方啟鑫
• Other Authors: Jen-Inn Chyi
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/67426845057741935212

碩士 === 國立中央大學 === 電機工程研究所 === 92 === In this letter, we reported a low-resistance, thermally stable and high-reflectivity Pd(3 nm)/Ni(2 nm)/Al(150 nm)/Ti(20 nm)/Au(30 nm) Ohmic contact to p-type GaN: Mg (1.5×1017 cm-3 ). The specific contact resistance of the contact is as low as 1.23×10-2 ohm-cm2. After 48 hours annealing in a N2 ambient at 500℃, the specific contact resistance keeps below 1.5 ×10-2 ohm-cm2. The effect of Ni barrier layer of improvement of thermal stability in Pd(3 nm)/Ni(2 nm)/Al(150 nm)/Ti(20 nm)/Au(30 nm) is proposed and discussed in this work. Reflectivity of Pd(3 nm)/Ni(2 nm)/Al(150 nm)/Ti(20 nm)/Au(30 nm) Ohmic contact in the wavelength range of 350 to 400 nm is about 70%, which is expected to be beneficial for the fabrication of high efficiency nitride-based ultraviolet flip-chip light-emitting diodes.