Investigation of InGaN/GaN Light Emitting Diode
博士 === 國立中央大學 === 電機工程研究所 === 92 === This dissertation includes the growth, fabrication, and characterization of Mg-doped GaN and InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) by metalorganic chemical vapor deposition (MOCVD). First, we utilized Hall measurement, photoluminescence...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18152097049547423378 |