Fabrication and Characteristic Analysis of InP Based Heterojunction Bipolar Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 92 === This research is focus on Fabrication and Characteristic Analysis of InP Based Heterojunction Bipolar Transistors. First, we invent a new technique to prevent BCB remain on the contact window. By using this technique, we invent " Quick Process of HBT RF devi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/985nzv |