Investigation of InGaN/GaN Light Emitting Diode
碩士 === 國立中央大學 === 電機工程研究所 === 92 === A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack,...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79969050495085222285 |