Investigation of InGaN/GaN Light Emitting Diode

• Main Authors: Yu-Chuan Liu, 劉育全
• Other Authors: Jen-Inn Chyi
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/79969050495085222285

碩士 === 國立中央大學 === 電機工程研究所 === 92 === A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure.