Study of Forming Si/Ge Quantum dots for Single-Electron Devices
碩士 === 國立中央大學 === 電機工程研究所 === 92 === In this thesis, the technique of forming Si & Ge quantum dots for Single-electron devices will be proposed. The advantages of the technique are well controllable, reproducible and compatible with traditional CMOS process.
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17073552506973351786 |