射頻磁控濺鍍透明導電膜AZO/AgPd/AZO複層薄膜特性分析

• Main Authors: Kun-Hsin Lu, 盧坤新
• Other Authors: Yi-Cheng Lin
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/50105303057564416235

碩士 === 國立彰化師範大學 === 機電工程學系 === 92 === The aims of the study were to investigate the effects of process parameters on electrical and optical properties of AZO(ZnO:Al) and AgPd multi-layer films by radio frequency(RF) magnetron sputtering on type 1737F Corning glass. The processes include RF power, substrate temperature, working pressure and thickness of thin film, respectively. After the deposition, four-point probe and spectrophotometer were used to measure resistivity and transmittance of thin films. X-ray diffractiometer and transmission electron microscope were used to identify the crystalline. The experimental results show that the multi-layer deposition of AZO and AgPd thin films in RF power of 350W/150W/350W, thickness of 60nm/5nm/50nm of multi-layer films and without heating on substrate has 90% transmittance and a low resistivity as 8.28×10-4Ωcm be obtained. Resistivity is increased with increase of thickness of outside-layer AZO film in the range from 60nm to 160nm. But, resistivity is reduced with thickness of outside-lay AZO thin film in the range from 160nm to 200nm. The transmittance is reduced with increase of thickness of outside-layer AZO thin film. To heat substrate during process will increase the crystalline of AZO and AgPd, but decrease the transmittance. The resistivity is increased and transmittance is decrease with increase of working pressure, it is because that the AgPd layer have more defects and discontinuous interface between AgPd and AZO. The relationship between the transmittance/resistance and RF power has not existed lineally. The best optics and electricity occurs at RF power of AgPd in 150W. The crystalline of AgPd is a domain factor to effect electricity and optics in AZO/AgPd/AZO multilayer film. Low resistance and high transparency with better crystalline of AgPd.