Growth and Characterization of AlN Thin Films Deposition Using Dual Ion Beam Sputtering System
碩士 === 國立中山大學 === 材料科學研究所 === 92 === Aluminum nitride (AlN) thin film is a promising material as buffer layer in GaN-based optoelectronic and electronic devices or as a substrate to fabricate Surface Acoustic Wave (SAW) and Film Bulk Acoustic wave Resonant (FBAR) devices in high frequency in wireles...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58464250556054123375 |