The growth and characterization of Si-doped GaN thin film andnanodots
碩士 === 國立中山大學 === 物理學系研究所 === 92 === In this thesis, we study a series of Si-doped GaN thin films and nanodots. These samples are growth on c-face sapphire substrate by Molecular Beam Epitaxy. In Si-doped GaN thin film growth, different Si cell temperature are used to control the dopant concentratio...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63783145470886722607 |