The growth and characterization of Si-doped GaN thin film andnanodots
碩士 === 國立中山大學 === 物理學系研究所 === 92 === In this thesis, we study a series of Si-doped GaN thin films and nanodots. These samples are growth on c-face sapphire substrate by Molecular Beam Epitaxy. In Si-doped GaN thin film growth, different Si cell temperature are used to control the dopant concentratio...
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ndltd-TW-092NSYS51980012015-10-13T13:05:07Z http://ndltd.ncl.edu.tw/handle/63783145470886722607 The growth and characterization of Si-doped GaN thin film andnanodots 矽摻雜的氮化鎵薄膜及奈米點的成長和分析 Jian-Feng Wu 吳建鋒 碩士 國立中山大學 物理學系研究所 92 In this thesis, we study a series of Si-doped GaN thin films and nanodots. These samples are growth on c-face sapphire substrate by Molecular Beam Epitaxy. In Si-doped GaN thin film growth, different Si cell temperature are used to control the dopant concentration. Van der Pauw hall measurement is used to measure the carrier concentrations and the mobilities. As increase Si cell temperature, the carrier concentration and the mobility increase. The maximum carrier concentration is 8 × 1019 cm-3, and the maximum mobility is 194 cm2/V-s. As increasing the Si dopant concentration, the near band edge photoluminescence emission peak intensity increases, but the full width at half maximum broaden from 47 meV to 117 meV. In Raman measurement result, with the increasing of Si dopant concentration, the E2(high) mode shifts from 569.4 cm-1 to 567.9 cm-1. The A1(LO) mode disappears gradually. In the nanodot growth, the AFM images show that the nanodots size become large as increasing the growth time. The nanodots size is change from 1.2 nm to 5.6 nm high and 40 nm to 110 nm wide, but the density of the nanodots decreases from 1.9 × 1010 cm-2 to 6 × 109 cm-2 at 15 sec and 90 sec growth, respectively. According to the AFM image of the nanodots surface morphology, the nanodots growth mode should be the Stranski-Krastanow mode. none 杜立偉 2003 學位論文 ; thesis 60 zh-TW |
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碩士 === 國立中山大學 === 物理學系研究所 === 92 === In this thesis, we study a series of Si-doped GaN thin films and nanodots. These samples are growth on c-face sapphire substrate by Molecular Beam Epitaxy. In Si-doped GaN thin film growth, different Si cell temperature are used to control the dopant concentration. Van der Pauw hall measurement is used to measure the carrier concentrations and the mobilities. As increase Si cell temperature, the carrier concentration and the mobility increase. The maximum carrier concentration is 8 × 1019 cm-3, and the maximum mobility is 194 cm2/V-s. As increasing the Si dopant concentration, the near band edge photoluminescence emission peak intensity increases, but the full width at half maximum broaden from 47 meV to 117 meV. In Raman measurement result, with the increasing of Si dopant concentration, the E2(high) mode shifts from 569.4 cm-1 to 567.9 cm-1. The A1(LO) mode disappears gradually. In the nanodot growth, the AFM images show that the nanodots size become large as increasing the growth time. The nanodots size is change from 1.2 nm to 5.6 nm high and 40 nm to 110 nm wide, but the density of the nanodots decreases from 1.9 × 1010 cm-2 to 6 × 109 cm-2 at 15 sec and 90 sec growth, respectively. According to the AFM image of the nanodots surface morphology, the nanodots growth mode should be the Stranski-Krastanow mode.
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none Jian-Feng Wu 吳建鋒 |
author |
Jian-Feng Wu 吳建鋒 |
spellingShingle |
Jian-Feng Wu 吳建鋒 The growth and characterization of Si-doped GaN thin film andnanodots |
author_sort |
Jian-Feng Wu |
title |
The growth and characterization of Si-doped GaN thin film andnanodots |
title_short |
The growth and characterization of Si-doped GaN thin film andnanodots |
title_full |
The growth and characterization of Si-doped GaN thin film andnanodots |
title_fullStr |
The growth and characterization of Si-doped GaN thin film andnanodots |
title_full_unstemmed |
The growth and characterization of Si-doped GaN thin film andnanodots |
title_sort |
growth and characterization of si-doped gan thin film andnanodots |
publishDate |
2003 |
url |
http://ndltd.ncl.edu.tw/handle/63783145470886722607 |
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