The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements
碩士 === 國立中山大學 === 物理學系研究所 === 92 === High efficiency components are key elements of solid-state amplifiers for wireless application. We used HEMT (high-electron-mobility transistor) to obtain high mobility 2DEGs. AlGaN makes itself an attractive material for high frequency devices, and the system i...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12878882234808303078 |