Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD
碩士 === 國立中山大學 === 物理學系研究所 === 92 === We discuss the PL spectra of the InN band gap. The InN thin film epitaxy grows on both Si (111) and sapphire (0001) by the PA-MBE (molecular beam epi). We change different grown conditions to improve the sample quality. In experiment part, the first step is...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00879301819916926749 |