Dual Threshold Voltage SRAM & BIST Comparators

博士 === 國立中山大學 === 電機工程學系研究所 === 92 === Since the invention of SRAM (Static Random Access Memory), many improvements have been proposed. The major targets are speed, area, and power consumption. The evolution of the CMOS process technology makes it possible to implement SRAM by using dual threshold v...

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Bibliographic Details
Main Authors: Po-Ming Lee, 李博明
Other Authors: Chua-Chin Wang
Format: Others
Language:en_US
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/54537803463637070668