Photoluminescence Characteristics of ZnO Thin Films by Reactive RF Magnetron Sputtering
碩士 === 國立中山大學 === 電機工程學系研究所 === 92 === In this study, the reactive rf magnetron sputtering was used to deposit zinc oxide (ZnO) thin films on Si substrate. The optimal sputtering parameters for film as luminescence application were found to be oxygen concentration (O2/O2+Ar) of 21%, RF power of 100W...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13778007541907436201 |