A Nano MOSFET with Spacer-like Silicide Source/Drain and Halo Implantation
碩士 === 國立中山大學 === 電機工程學系研究所 === 92 === In deep submicron region, scaling the sizes of devices and chips down is indispensable. The silicide at ultra-shallow extension area is used in order to keep low sheet resistance while junction depth is scaled. To introduce the implant between source and chan...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31468877820882918071 |