Study on silicon oxycarbide deposited by high density plasma chemical vapor deposition for hydrogen ion-sensitive membrane
碩士 === 國立清華大學 === 材料科學工程學系 === 92 === Abstract The ion sensitive field effect transistor (ISFET) is a microsensor consists of the theorem of electrochemistry and the characteristic of a field effect transistor. The principle of the MOSFET is be used for ISFET. The metalline gate of the MOSFET is sub...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46369237852142939314 |