Effect of Ge Capped Layers on the Formation of Ni Silicide

碩士 === 國立清華大學 === 材料科學工程學系 === 92 === Thin films of Ni (1ML) and Ge (5, 10, 15, 20ML) were deposited on (100) Si substrate in the UHV chamber at room temperature, followed by ex-situ annealing at 400-800℃ for 3 hours in a separate chamber with a base pressure of 2×10-6 torr, and succeeded by charact...

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Bibliographic Details
Main Authors: Ling-Hui Wu, 吳怜慧
Other Authors: Cho-Jen Tsai
Format: Others
Language:en_US
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/k957hb