Effect of Ge Capped Layers on the Formation of Ni Silicide
碩士 === 國立清華大學 === 材料科學工程學系 === 92 === Thin films of Ni (1ML) and Ge (5, 10, 15, 20ML) were deposited on (100) Si substrate in the UHV chamber at room temperature, followed by ex-situ annealing at 400-800℃ for 3 hours in a separate chamber with a base pressure of 2×10-6 torr, and succeeded by charact...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/k957hb |