Effect of Ge Capped Layers on the Formation of Ni Silicide
碩士 === 國立清華大學 === 材料科學工程學系 === 92 === Thin films of Ni (1ML) and Ge (5, 10, 15, 20ML) were deposited on (100) Si substrate in the UHV chamber at room temperature, followed by ex-situ annealing at 400-800℃ for 3 hours in a separate chamber with a base pressure of 2×10-6 torr, and succeeded by charact...
Main Authors: | Ling-Hui Wu, 吳怜慧 |
---|---|
Other Authors: | Cho-Jen Tsai |
Format: | Others |
Language: | en_US |
Published: |
2004
|
Online Access: | http://ndltd.ncl.edu.tw/handle/k957hb |
Similar Items
-
The Effects of Ti Capping Layers on the Formation and Thermal Stability of Nickel Silicides
by: Pai-Ying Su, et al.
Published: (2001) -
Effects of Ti and TiN capping layer on cobalt silicide formation
by: Ying-Hua Kuo, et al.
Published: (2007) -
Formation of Ni Germano-Silicide on Single Crystalline Si0.3Ge0.7/Si
by: Wu Kuan Long, et al.
Published: (2002) -
NiSi and NiSiGe with Yb Silicide Segregation Layer for Advanced Schottky Barrier Device
by: Jr-Jie Tsai, et al.
Published: (2011) -
The Effects of Oxygen on the Formation of Ni, Pd, and Pt Silicides
by: Scott, David Martin
Published: (1982)