Characterizations of Silicon Nitride and Tungsten Oxide Nanowires on Si (111) and Si (100)

碩士 === 國立清華大學 === 材料科學工程學系 === 92 === Part 1 (Characterizations of The Epi-nitride) High-K dielectric materials have attracted much attentation due to the requirements for the shrinkage of the nano-electronic devices. In this study, single crystal silicon nitrides have been prepared by plasma enhan...

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Bibliographic Details
Main Authors: Mo-Tung Chang, 張睦東
Other Authors: L. J. Chou
Format: Others
Language:en_US
Online Access:http://ndltd.ncl.edu.tw/handle/r5by56