The Quantum Effect Characteristics of SiGe Heterojunction Bipolar Transistor
碩士 === 國立清華大學 === 電子工程研究所 === 92 === Abstract In this work, we first review the bandgap theory of the SiGe Heterojunction Bipolar Transistor (HBT), and it's current vs. voltage characteristics. Because the base region bandgap is smaller than that of collector region, so, it has bandgap disc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75774494484160326925 |