Development of Nano-Scale Etching Technique on GaN by CPAWE
碩士 === 國立清華大學 === 電子工程研究所 === 92 === Photoelectrochemical etching (PEC) is a photon assisted wet etching. Low damage and high etching rate makes it a good method for etching n-type GaN. By using K2S2O8 as the oxidizing agent, the technique of electrodless photoeletro- chemical etching (ELPEC) was bu...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63212469923539310115 |