the fabrication and characterization of metal(Ti) insulator(TiOx) Tunnel transistors
碩士 === 國立清華大學 === 電子工程研究所 === 92 === Metal-insulator-tunnel-transistors (MITTs) that operate by varying the gate voltage to control the current flow through a tunnel insulator were fabricated. In this work, Si/SiO2 were used as gate/gate oxide. The gate oxide layer (gate oxide thickness=11nm) is for...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47177054069674115461 |