the fabrication and characterization of metal(Ti) insulator(TiOx) Tunnel transistors
碩士 === 國立清華大學 === 電子工程研究所 === 92 === Metal-insulator-tunnel-transistors (MITTs) that operate by varying the gate voltage to control the current flow through a tunnel insulator were fabricated. In this work, Si/SiO2 were used as gate/gate oxide. The gate oxide layer (gate oxide thickness=11nm) is for...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47177054069674115461 |
| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 92 === Metal-insulator-tunnel-transistors (MITTs) that operate by varying the gate voltage to control the current flow through a tunnel insulator were fabricated. In this work, Si/SiO2 were used as gate/gate oxide. The gate oxide layer (gate oxide thickness=11nm) is formed by thermal oxidation. Ti was used as the metal electrodes and TiOx was used as the tunnel oxide. Ti was deposited by E-Gun evaporation system. The local Ti/TiOx/Ti tunnel junctions were formed by tip-induced anodic oxidation with conducting-tip atomic force microscope (AFM). The nanometer-scale channel length is defined by the thickness of the tunnel insulator (TiOx). The thickness of TiOx was 58.8 nm and the dynamic dielectric constant (�捯) of the channel insulator was extracted from Schottky emission is 1.7. The IDS-VDS characteristics of the MITT indicated that the modulation of the tunneling current by gate voltage at room temperature was observed. In addition, an analysis of self-consistent method showed that the electron effective mass in TiOx was about 0.48m0 and the extracted Ti/TiOx barrier height was about 96 meV.
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