The Fabrication and Characterization of Metal (Al)/ La2O3/p-Si Capacitors And Field-effect Transistors
碩士 === 國立清華大學 === 電子工程研究所 === 92 === Metal-oxide-semiconductor (MOS) capacitors that incorporate La2O3 dielectrics were fabricated by RF magnetron sputtering. In this work, the essential structures and electrical properties of La2O3 thin film were investigated. C-V, X-ray energy dispersive spectrome...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40956665428475841788 |