Development of nanometer-scale mask by EC-STM manipulation
碩士 === 國立清華大學 === 電子工程研究所 === 92 === The transistor has evolved into the nanoscale device. The most common form is a simple switch the field effect transistor (FET). The modern FET qualifies as a nanoscale device since the length of the gate region is only 90nm .The FET has slowly evolved through im...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/42724149318624645104 |