The Characterization and Fabrication of Pyroelectric Infrared image Sensor

• Main Authors: kai-peng chu, 朱凱鵬
• Other Authors: chun-chen chan
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/25581533502000938825

碩士 === 國立臺灣海洋大學 === 電機工程學系 === 92 === Abstract In this paper, the integrated Pyroelectric Infrared image Sensors have been made using a Ca-Modified Lead Titanate (Pb0.7Ca0.3TiO3, PCT) thin films by RF sputtering method on silicon substrate. In addition, the etching technology is used to increase the sensitivity of the device. According as the technology, we can fabricate PIR image array to study the distribution of thermal image. The deposited PCT thin film is the perovskite structure and the PCT thin film at annealed 650℃for 15 minutes can obtain the better performance. From the hysteresis loop, its remanent polarization (Pr) is 25.3 mC/cm2 and the coercive electric field is 52.65 KV/cm. Its pyroelectric coefficient is 4.13×10-4 C/m2K at 300℃. For the PIR performance measurement, the voltage response of the single PIR sensor is 468.98 VW-1 and the specific detectivity is 8.28×106 cmW-1 at 0.3 Hz. In addition, we use these results to fabricate 2-D 8x8 element PIR image sensors. The sensor has been used for thermal image test in this experiment.