Fabrication and Characterization of the Metal-Semiconductor Thin-Film Infrared Thermopile Sensors

• Main Authors: Chen-Hung Chuang, 莊振弘
• Other Authors: Chung-Cheng Chang
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/21351649523580713592

碩士 === 國立臺灣海洋大學 === 電機工程學系 === 92 === Abstract A multi-layer technology for manufacturing thin – film thermopile sensor is investigated. The device uses a series – connected of thermocouples whose hot junctions are supported on a membrane formed using anisotropic etching. This study reports a thermopile structure using n-poly silicon with platinum. By deposited the poly silicon with POCl3 drive in and diffusion, we select different thickness and test the results. The device is uses a series thermocouple on the thin film, and then separate two material by spin-on-glass (SOG), expect the hot and cold junctions. At last, bond the device in PCB board to easy our measurement. Under the black body at 500K and 1Hz modulation frequency, three different thicknesses of the n-poly/metal thermopiles (such as2000Å, 4000Å, 8000Å) individually have the voltage response 12V/W, 26V/W and 28V/W and the individually D* is 5.82×106 、4×107 、5.28×107, in order to increasing the detectivity and voltage response, we should add absorption layer due to the parameter .