Characteristics and Designs of SiGeC HBTs
碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === Silicon Germanium materials had been widely used in novel SiGe HBTs (heterojunction bipolar transistor). MOSFETs (metal-oxide-semiconductor field-effect transistors) and photodetectors because of its flexibility and low cost. In this thesis, we had in...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40586110691293431833 |