The Electrical Properties of MOS Devices with Nitrogen Implanted Gate Oxides
碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === To obtain high performance and low power device, gate oxide thickness shrinkage is a main stream in modern ULSI industry. There are many approaches to achieve ultra thin gate oxide in the state of art. Nitrogen implantation prior to gate oxidation is one of the...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61991253291699617491 |