Metal-Oxide-Semiconductor Tunneling Photodetectors
博士 === 國立臺灣大學 === 電機工程學研究所 === 92 === In this thesis, the novel metal-oxide-semiconductor (MOS) tunneling diodes with high leakage current were utilized as photodetectors. The leakage of inversion carrier through ultrathin oxide makes the device to operate in the deep depletion region. The dark curr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55043736478432191213 |