Transmission Electron Microscopy Studies of InGaN/GaN Multiple Quantum Wells with Different Interfacial Layers and Zinc Oxide Nano-structures
碩士 === 國立臺灣大學 === 光電工程學研究所 === 92 === In this research, we compare four InGaN/GaN multiple quantum-well (QW) samples (un-doped wells and silicon-doped barriers) of different interfacial layers in nanostructures and optical property. In two of the samples, InN interfacial layers are placed between we...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83281712980179720566 |