Composition Distribution and Growth Temperature in In(Ga)As Self-Assembled Quantum Dots
碩士 === 國立臺灣大學 === 光電工程學研究所 === 92 === For checking how much Ga component enter InAs/GaAs quantum dots (QDs) from GaAs substrate due to growth temperature of QDs and composition of overgrowth layer, the simulation must be considered composition variation in different position of QD. For this reason,...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/85597809824794555669 |